Cell Lab 3N (99.9%) Hafnium Oxide (HfO₂) Pieces Evaporation Materials

Cell Lab 3N (99.9%) Hafnium Oxide (HfO₂) Pieces Evaporation Materials

High-Purity HfO₂ for Semiconductor, Optical, and Dielectric Thin Films

General Description

Cell Lab 3N (99.9%) Hafnium Oxide (HfO₂), also known as hafnia, is a high-melting, thermally stable compound of hafnium used extensively in semiconductors, optical coatings, and dielectric films. As an electrical insulator with a band gap of 5.3–5.7 eV, HfO₂ enables the fabrication of high-κ gate dielectrics in modern CMOS devices and acts as a robust protective coating in high-temperature or plasma environments.

Its chemical inertness, high melting point (2,758 °C), and excellent transparency in the visible and infrared range make HfO₂ a preferred material for optical thin films, multilayer mirrors, and laser coatings.

Key Features

• High Purity (99.9%) – Ensures consistent optical and electronic performance in precision coating systems.

• Excellent Dielectric Strength – Ideal for use in high-κ gate oxides and microelectronic devices.

• High Melting Point (2,758 °C) – Suitable for demanding high-temperature deposition environments.

• Superior Optical Transparency – Stable transmission from UV to IR wavelengths for optical coatings.

• Chemical & Thermal Stability – Resists corrosion, oxidation, and degradation under vacuum conditions.

Technical Specifications

Applications & Industries

• Semiconductors – Used as high-κ dielectric in transistors, DRAMs, and capacitors.

• Optical Coatings – Applied in mirrors, filters, and laser optics for high reflection and durability.

• Protective Barriers – Provides excellent thermal and plasma resistance for industrial components.

• Energy Research – Employed in photovoltaic and thermophotonic devices for thermal insulation.

• Aerospace & Defence – Used in infrared optical domes and heat-resistant coatings.

FAQ

Q1: Why is HfO₂ used in semiconductor applications?
Its high dielectric constant and thermal stability make it a superior alternative to SiO₂ in advanced CMOS technologies.

Q2: Can HfO₂ be used for E-beam evaporation?
Yes. HfO₂ offers excellent E-beam evaporation performance with low contamination and uniform film growth.

Q3: What are suitable crucible materials for evaporation?
Al₂O₃ crucibles and W or Mo boats are ideal for stable, repeatable deposition.

Q4: Is customisation available for laboratory or production use?
Yes. Cell Lab can supply custom quantities and purities based on research or industrial requirements.